1 July 1995 Volterra analysis of second- and third-order intermodulation of InGaAsP/InP laser diodes: theory and experiment
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Abstract
Analytical formulas for intermodulation- and harmonic-distortion products of a directly intensity-modulated laser diode are presented. The Volterra theory of nonlinear systems is applied to the single-mode rate equations of the modulated carrier and photon densities. This analysis takes gain saturation and noncoherent external optical feedback into account and provides expressions for the frequency-dependent intermodulation- and harmonic-distortion products. The single-mode analysis has been applied to a InGaAsP/InP Fabry-Perot laser diode, and the theoretical values of the second- and third-order intermodulation products at high modulation frequencies show good agreement with measurements. Thus, the formulas seem to provide a convenient and accurate means of predicting the laser-induced distortions in an analog optical transmission link over a wide frequency range.
Stephan G. Hunziker "Volterra analysis of second- and third-order intermodulation of InGaAsP/InP laser diodes: theory and experiment," Optical Engineering 34(7), (1 July 1995). https://doi.org/10.1117/12.204795
Published: 1 July 1995
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Cited by 6 scholarly publications.
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KEYWORDS
Intermodulation

Semiconductor lasers

Modulation

Complex systems

Hole burning spectroscopy

Analog electronics

Optical isolators

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