Articles

On the uniform composition of InxGa1−xSb (x=0.20) bulk crystals for special optoelectronic devices

[+] Author Affiliations
Stefan Adrian Manea

Institute for Physics and Technology of Materials P.O. Box MG-7 Bucharest, Romania

Ion I. Munteanu

University of Bucharest Condensed Matter and Radio-Physics Department Bucharest, Romania

Cristiana Eugenia Ana Grigorescu

Institute of Optoelectronics P.O. Box MG-22 Bucharest, Romania

Michaela Filofteia Logofatu

University of Bucharest Condensed Matter and Radio-Physics Department Bucharest, Romania

Mihail Florin Lazarescu

Institute for Physics and Technology of Materials P.O. Box MG-7 Bucharest, Romania ?

Opt. Eng. 35(5), 1356-1359 (May 01, 1996). doi:10.1117/1.600633
History: Received Aug. 3, 1995; Revised Oct. 31, 1995; Accepted Nov. 17, 1995
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Abstract

Polycrystalline p‐type InxGa1−xSb (x=0.20) for optoelectronic devices has been obtained by rapid direct synthesis from high‐purity (99.9999%) In, Ga, and Sb. The uniformity of the composition has been checked by neutron activation analysis and also by x‐ray diffractometry (Vegard‐law approximation). From Hall‐effect measurements an acceptor concentration of 3.2×1017 cm−3 and a mobility of 628 cm2/V s for holes, at liquid nitrogen temperature, have been determined, and from absorption measurements, a quite diffuse edge for the optical absorption coefficient resulted. This paper describes the method of rapid direct synthesis of the ternary compound and the techniques used for the characterization of this material for special optoelectronic applications. © 1996 Society of Photo−Optical Instrumentation Engineers.


Citation

Stefan Adrian Manea ; Ion I. Munteanu ; Cristiana Eugenia Ana Grigorescu ; Michaela Filofteia Logofatu and Mihail Florin Lazarescu
"On the uniform composition of InxGa1−xSb (x=0.20) bulk crystals for special optoelectronic devices", Opt. Eng. 35(5), 1356-1359 (May 01, 1996). ; http://dx.doi.org/10.1117/1.600633


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