1 October 2010 Tunable, high beam quality and narrow linewidth semiconductor disk laser
Peng Zhang, Yanrong Song, Xinping Zhang, Jinrong Tian, Chennupati Jagadish, Hark Hoe Tan, Zhigang Zhang
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Abstract
We present a tunable, high beam quality and narrow linewidth semiconductor disk laser. The maximum output power is 160 mW, and the slope efficiency is 22% using a gain chip without any postprocess under room temperature. When a 40-µm uncoated glass etalon is employed to tune the wavelength, the maximum output power of 110 mW, the tuning range of ~10 nm, the narrow linewidth of 0.07 nm, and the M2 factor of 1.03 are obtained. The tunability of the laser is theoretically analyzed, and the results are in good agreement with experiments.
©(2010) Society of Photo-Optical Instrumentation Engineers (SPIE)
Peng Zhang, Yanrong Song, Xinping Zhang, Jinrong Tian, Chennupati Jagadish, Hark Hoe Tan, and Zhigang Zhang "Tunable, high beam quality and narrow linewidth semiconductor disk laser," Optical Engineering 49(10), 104201 (1 October 2010). https://doi.org/10.1117/1.3490418
Published: 1 October 2010
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CITATIONS
Cited by 1 scholarly publication.
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KEYWORDS
Semiconductor lasers

Fabry–Perot interferometers

Semiconductors

Disk lasers

Tunable lasers

Quantum wells

Vertical cavity surface emitting lasers

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