In this study, we investigate the deposition of thin films by radio-frequency ion-beam sputtering deposition. By varying the amount of and Ar flow and ion-beam voltage, we can obtain an optimal refractive index of 2.07, extinction coefficient (at the central wavelength of ) of , and deposition rate of . The x-ray photoelectron spectra of films deposited with different beam voltages are also analyzed. The residual stress of the films varied from , depending on the beam voltage. The residual stress is reduced from when the film is divided into four layers with three interfaces.