Thin Films

Reduction of residual stress in optical silicon nitcide thin films prepared by radio-frequency ion beam sputtering deposition

[+] Author Affiliations
Cheng-Chung Lee

National Central University, Department of Optics and Photonics, Thin Film Technology Center, Chung-Li 32001 Taiwan

Kun-Hsien Lee

National Central University, Department of Optics and Photonics, Thin Film Technology Center, Chung-Li 32001 Taiwan

Chien-Jen Tang

Minghsin University of Science and Technology, Department of Optoelectronic System Engineering, Optoelectronics Technology Research Center, Hsin-Chu 304 Taiwan

Cheng-Chung Jaing

Minghsin University of Science and Technology, Department of Optoelectronic System Engineering, Optoelectronics Technology Research Center, Hsin-Chu 304 Taiwan

Hsi-Chao Chen

National Yunlin University of Science and Technology, Graduate School of Optoelectronics, Yunlin 64002 Taiwan

Opt. Eng. 49(6), 063802 (June 28, 2010). doi:10.1117/1.3456708
History: Received January 12, 2010; Revised April 15, 2010; Accepted May 12, 2010; Published June 28, 2010; Online June 28, 2010
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In this study, we investigate the deposition of SiNx thin films by radio-frequency ion-beam sputtering deposition. By varying the amount of N2 and Ar flow and ion-beam voltage, we can obtain an optimal refractive index of 2.07, extinction coefficient (at the central wavelength of 500nm) of 3.44×104, and deposition rate of 0.166nms. The x-ray photoelectron spectra of SiNx films deposited with different beam voltages are also analyzed. The residual stress of the SiNx films varied from 1.38to2.17GPa, depending on the beam voltage. The residual stress is reduced from 2.17to1.40GPa when the film is divided into four layers with three interfaces.

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© 2010 Society of Photo-Optical Instrumentation Engineers

Citation

Cheng-Chung Lee ; Kun-Hsien Lee ; Chien-Jen Tang ; Cheng-Chung Jaing and Hsi-Chao Chen
"Reduction of residual stress in optical silicon nitcide thin films prepared by radio-frequency ion beam sputtering deposition", Opt. Eng. 49(6), 063802 (June 28, 2010). ; http://dx.doi.org/10.1117/1.3456708


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