Formation of a broad photoluminescence band from Si+-implanted SiO2 films by varying the heating rate of rapid thermal annealing

Ming-Yue Fu; Jen-Hwan Tsai; Cheng-Fu Yang

doi:10.1117/1.3461964

1 July 2010 Formation of a broad photoluminescence band from Si+-implanted SiO2 films by varying the heating rate of rapid thermal annealing

Ming-Yue Fu, Jen-Hwan Tsai, Cheng-Fu Yang

Author Affiliations +

Optical Engineering, Vol. 49, Issue 7, 073801 (July 2010). https://doi.org/10.1117/1.3461964

Abstract

Varying the heating rate of rapid thermal annealing (RTA) reveals a broadband shift of room-temperature photoluminescence (PL) in 3×1016 cm−2 Si+-implanted 400-nm-thick SiO2 films after RTA at 1150°C in dry nitrogen. At a heating rate of 100°C/s, the PL peaks shift from 2.6 eV to 1.7 eV for isothermal RTA durations from 1 to 20 s. Additionally, decreasing the heating rate to 25°C/s does not significantly shift the PL peak in the films after the isothermal RTA for durations ≥1 s. The attractive features of RTA provide a valuable reference for manufacturing of optoelectronic devices.

©(2010) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Ming-Yue Fu, Jen-Hwan Tsai, and Cheng-Fu Yang "Formation of a broad photoluminescence band from Si+-implanted SiO2 films by varying the heating rate of rapid thermal annealing," Optical Engineering 49(7), 073801 (1 July 2010). https://doi.org/10.1117/1.3461964

Published: 1 July 2010

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