1 July 2001 Fabrication of a waveguiding layer in Teflon AF by ion irradiation
Markus Leitz, R. P. Podgorsek, Hilmar Franke, Daniel Hernandez Cruz, Emile J. Knystautas, Roger A. Lessard
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The modification of thin Teflon AF® films by He+ ion irradiation was investigated. As an integrated optical measurement technique, leaky-mode spectroscopy has been applied, and an increase of ?n = 8 x 10-3 for the real part of the refractive index has been found in the irradiated surface region of the film. The irradiated films can be regarded as a bilayer system consisting of a layer with low refractive index and a layer with high refractive index. The latter can be used as an optical waveguide with a substrate of unmodified Teflon AF. In addition, a decrease of the initial film thickness, an increase in UV absorption, and no significant increase in absorption of near-infrared light were found.
©(2001) Society of Photo-Optical Instrumentation Engineers (SPIE)
Markus Leitz, R. P. Podgorsek, Hilmar Franke, Daniel Hernandez Cruz, Emile J. Knystautas, and Roger A. Lessard "Fabrication of a waveguiding layer in Teflon AF by ion irradiation," Optical Engineering 40(7), (1 July 2001). https://doi.org/10.1117/1.1385331
Published: 1 July 2001
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Cited by 5 scholarly publications.
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KEYWORDS
Refractive index

Atrial fibrillation

Ions

Polymers

Waveguides

Reflectivity

Prisms

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