We demonstrate a distributed Bragg reflector (DBR) waveguide laser array by using an Ag film ion-exchange technique. We achieve an output power of 11 mW at 1540 nm for a coupled pump power of 145 mW, with a threshold of 60 mW and slope efficiency of 13%. The thin film ion exchange produces the highest index change possible at the surface, due to the ion exchange technique. Hence a wide array of wavelengths can be implemented in a single chip. We demonstrate a lasing wavelength range of 2.1 nm (1548.6 to 1550.7 nm) in an array with a single grating. Since the index change due to our process is large, we can fine tune the wavelengths of the array to fall on International Telecommunication Union (ITU) grid wavelengths by annealing. We demonstrate fine tuning of the wavelength for a channel from 1540.2 to 1540 nm, ITU specified wavelength, by annealing. © 2002 Society of Photo-Optical Instrumentation Engineers.