Preparation of transparent conducting oxide films by activated reactive evaporation

K. Narashimha Rao

doi:10.1117/1.1513798

1 November 2002 Preparation of transparent conducting oxide films by activated reactive evaporation

K. Narashimha Rao

Optical Engineering, Vol. 41, Issue 11, (November 2002). https://doi.org/10.1117/1.1513798

Indium-tin oxide films have been deposited by reactive electron beam evaporation of In+Sn alloy both in neutral and ionized oxygen environments. A low-energy ion source (fabricated in-house) has been used. Films deposited with neutral oxygen exhibited very low optical transmittance (5% at 550 nm). Highly transparent (85%) and low-resistivity (5×10–4 cm) films have been deposited in ionized oxygen at ambient substrate temperature. Optical and electrical properties of the films have been studied as a function of deposition parameters.

©(2002) Society of Photo-Optical Instrumentation Engineers (SPIE)

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K. Narashimha Rao "Preparation of transparent conducting oxide films by activated reactive evaporation," Optical Engineering 41(11), (1 November 2002). https://doi.org/10.1117/1.1513798

Published: 1 November 2002

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