Model for illumination-dependent trap occupancy in optically biased GaN metal-semiconductor field effect transistor for improved electrical characteristics

Adarsh Singh; Mridula Gupta; R.S. Gupta

doi:10.1117/1.1598962

1 September 2003 Model for illumination-dependent trap occupancy in optically biased GaN metal-semiconductor field effect transistor for improved electrical characteristics

Adarsh Singh, Mridula Gupta, R.S. Gupta

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Optical Engineering, Vol. 42, Issue 9, (September 2003). https://doi.org/10.1117/1.1598962

The effect of wavelength of illumination on the trap occupancy of an optically biased GaN metal-semiconductor field effect transistor (MESFET) for its improved electrical characteristics is presented. The model evaluates the I_d to V_d characteristics and transconductance of the device for the cases of light turning both on and off at a reference time t = 0. The photovoltaic effect across the Schottky junction and the depletion width modulation in the active layer are taken into account along with the gate-length modulation and parasitic source and drain resistances. It is shown that the trap-related degradation of the drain characteristics could be overcome when the device is used under illumination with light acting as a dual gate.

©(2003) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Adarsh Singh, Mridula Gupta, and R.S. Gupta "Model for illumination-dependent trap occupancy in optically biased GaN metal-semiconductor field effect transistor for improved electrical characteristics," Optical Engineering 42(9), (1 September 2003). https://doi.org/10.1117/1.1598962

Published: 1 September 2003

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KEYWORDS

Field effect transistors

Gallium nitride

Illumination engineering

Modulation

Instrument modeling

Channel projecting optics

Metals

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