SPECIAL SECTION ON ADVANCES IN OPTICAL WAVEGUIDE ENGINEERING

1.55-μm silicon-based reflection-type waveguide-integrated thermo-optic switch

[+] Author Affiliations
Francesca Cantore

Mediterranea University of Reggio Calabria, Department of Computer Science, Mathematics, Electronics, and Transportation, Location Feo di Vito, Reggio Calabria, I-89060, Italy E-mail: cantore@ing.unirc.it

Francesco G. Della Corte

Mediterranea University of Reggio Calabria, Department of Computer Science, Mathematics, Electronics, and Transportation, Location Feo di Vito, Reggio Calabria, I-89060, Italy

and National Research Council, Institute for Microelectronics and Microsystems, Via Pietro Castellino 111, Naples 80131, Italy

Opt. Eng. 42(10), 2835-2840 (Oct 01, 2003). doi:10.1117/1.1601235
History: Received Jan. 13, 2003; Revised May 1, 2003; Accepted May 6, 2003; Online September 24, 2003
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A novel rib waveguide-integrated switch is proposed and theoretically discussed. The device is based on the total internal reflection phenomenon (TIR) and the thermo-optic effect (TOE) in hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si). It takes advantage of a bandgap-engineered a-Si:H layer to explore the properties of an optical interface between materials showing similar refractive indexes but different thermo-optic coefficients. In particular, thanks to modern plasma-enhanced chemical vapor deposition techniques, the refractive index of the amorphous film can be properly tailored to match that of c-Si at a given temperature. TIR may be achieved, however, at the interface by acting on the temperature, because the two materials have different thermo-optic coefficients. The switch is integrated in a 4-μm-wide and 3-μm-thick single-mode rib waveguide. The substrate is a silicon-on-insulator (SOI) wafer with an oxide thickness of 500 nm. The active middle region optimal length is 282 μm. The device performance is analyzed at a wavelength of 1.55 μm. It is shown that the output crosstalk and insertion loss are less than −26 and 3.5 dB, respectively. © 2003 Society of Photo-Optical Instrumentation Engineers.

© 2003 Society of Photo-Optical Instrumentation Engineers

Citation

Francesca Cantore and Francesco G. Della Corte
"1.55-μm silicon-based reflection-type waveguide-integrated thermo-optic switch", Opt. Eng. 42(10), 2835-2840 (Oct 01, 2003). ; http://dx.doi.org/10.1117/1.1601235


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