1 October 2004 Complimentary metal-oxide semiconductor linear photosensor array for 3-D reconstruction applications
Gemma Hornero, Mauricio Moreno, R. Meri, Enric Montane-Borras, Atila Herms
Author Affiliations +
Abstract
A linear 128-photosensor array in a complimentary metal-oxide semiconductor (CMOS) standard technology is presented. The characteristics of the pixels are high voltage at the output in the range of 0 to 3.5 V and a pixel memory with the possibility of multiple readouts without significant degradation of information. The ASIC also includes a selection logic to select the pixel to be read. Using this CMOS photodetector array, we also present a low-cost prototype for the distance measurement and 3-D reconstruction of near and small objects, where the optical triangulation method used is appropriate. Good acquisition results are obtained in the experimental test.
©(2004) Society of Photo-Optical Instrumentation Engineers (SPIE)
Gemma Hornero, Mauricio Moreno, R. Meri, Enric Montane-Borras, and Atila Herms "Complimentary metal-oxide semiconductor linear photosensor array for 3-D reconstruction applications," Optical Engineering 43(10), (1 October 2004). https://doi.org/10.1117/1.1786939
Published: 1 October 2004
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Capacitors

Photodiodes

CMOS technology

Semiconductors

Transistors

3D acquisition

Prototyping

RELATED CONTENT


Back to Top