1 December 2004 High-frequency analog modulation of oxide confined 670-nm vertical-cavity surface-emitting lasers
Christina Carlsson, Peter Modh, John Halonen, Richard Schatz, Anders G. Larsson
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Abstract
We investigate the bandwidth limitations and the analog modulation characteristics at microwave frequencies (0.1 to 10 GHz) of a low-capacitance oxide-confined 670-nm InGaAlP vertical-cavity surface-emitting laser (VCSEL). A maximum modulation bandwidth of 6.3 GHz, limited by thermal effects, is achieved. From measurements of distortion and noise, a spurious free dynamic range (SFDR) of 100 dB Hz2/3 is obtained at frequencies up to 2 GHz, rendering such VCSELs useful for transmission of analog signals. At higher frequencies, the SFDR drops due to the thermally limited resonance frequency.
©(2004) Society of Photo-Optical Instrumentation Engineers (SPIE)
Christina Carlsson, Peter Modh, John Halonen, Richard Schatz, and Anders G. Larsson "High-frequency analog modulation of oxide confined 670-nm vertical-cavity surface-emitting lasers," Optical Engineering 43(12), (1 December 2004). https://doi.org/10.1117/1.1814361
Published: 1 December 2004
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Cited by 1 scholarly publication.
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KEYWORDS
Vertical cavity surface emitting lasers

Modulation

Analog modulation

Thermal effects

Distortion

Aluminium gallium indium phosphide

Oxides

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