Special Section on Applications of Laser Ablation and Micromachining

Picosecond high-repetition-rate pulsed laser ablation of dielectrics: the effect of energy accumulation between pulses

[+] Author Affiliations
Barry Luther-Davies, Andrei V. Rode, Nathan R. Madsen, Eugene G. Gamaly

ARC Centre for Ultra-high Bandwidth Devices for Optical Systems, Australian National University, Research School of Physical Science and Engineering, Laser Physics Centre, Canberra, ACT 0200, Australia E-mail: bld111@rsphysse.anu.edu.au

Opt. Eng. 44(5), 051102 (May 25, 2005). doi:10.1117/1.1905363
History: Received Aug. 12, 2004; Revised Oct. 25, 2004; Accepted Nov. 18, 2004; May 25, 2005; Online May 25, 2005
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We report experiments on the ablation of arsenic trisulphide and silicon using high-repetition-rate (megahertz) trains of picosecond pulses. In the case of arsenic trisulphide, the average single pulse fluence at ablation threshold is found to be >100 times lower when pulses are delivered as a 76-MHz train compared with the case of a solitary pulse. For silicon, however, the threshold for a 4.1-MHz train equals the value for a solitary pulse. A model of irradiation by high-repetition-rate pulse trains demonstrates that for arsenic trisulphide energy accumulates in the target surface from several hundred successive pulses, lowering the ablation threshold and causing a change from the laser-solid to laser-plasma mode as the surface temperature increases. © 2005 Society of Photo-Optical Instrumentation Engineers.

© 2005 Society of Photo-Optical Instrumentation Engineers

Citation

Barry Luther-Davies ; Andrei V. Rode ; Nathan R. Madsen and Eugene G. Gamaly
"Picosecond high-repetition-rate pulsed laser ablation of dielectrics: the effect of energy accumulation between pulses", Opt. Eng. 44(5), 051102 (May 25, 2005). ; http://dx.doi.org/10.1117/1.1905363


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