Optical Interconnects

Integration of germanium waveguide photodetectors for intrachip optical interconnects

[+] Author Affiliations
Mathieu Rouvière

Université Paris Sud, Institut d’Électronique Fondamentale, CNRS UMR 8622, 91405 Orsay Cedex, France, and , STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex, France

Mathieu Halbwax, Jean-Luc Cercus, Eric Cassan, Laurent Vivien, Daniel Pascal

Université Paris Sud, Institut d’Électronique Fondamentale, CNRS UMR 8622, 91405 Orsay Cedex, France

Michel Heitzmann, Jean-Michel Hartmann

CEA-Grenoble, LETI/D2NT/LFE, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France

Suzanne Laval

Université Paris Sud, Institut d’Électronique Fondamentale, CNRS UMR 8622, 91405 Orsay Cedex, France

Opt. Eng. 44(7), 075402 (July 18, 2005). doi:10.1117/1.1950067
History: Received October 04, 2004; Revised January 25, 2005; Accepted February 02, 2005; Published July 18, 2005
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The main characteristics of germanium photodetectors integrated in silicon-on-insulator optical waveguides for intrachip optical interconnects are presented. The epitaxial Ge layers are grown on Si(001) by reduced-pressure chemical vapor deposition. The optical absorption of Ge layers is recorded from 1.2to1.7μm and linked to the layer strain. The responsivity of an interdigitated metal-semiconductor-metal Ge photodetector has been measured. Light coupling from a slightly etched submicron rib silicon-on-insulator waveguide to a Ge photodetector is studied for two configurations: butt coupling and vertical coupling.

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© 2005 Society of Photo-Optical Instrumentation Engineers

Citation

Mathieu Rouvière ; Mathieu Halbwax ; Jean-Luc Cercus ; Eric Cassan ; Laurent Vivien, et al.
"Integration of germanium waveguide photodetectors for intrachip optical interconnects", Opt. Eng. 44(7), 075402 (July 18, 2005). ; http://dx.doi.org/10.1117/1.1950067


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