Optical Components, Detectors, and Displays

Nanoplasmonic optical switch based on Ga-Si3N4-Ga waveguide

[+] Author Affiliations
Wangshi Zhao

Rochester Institute of Technology, Kate Gleason College of Engineering, Microsystems Engineering, Rochester, New York 14623

Zhaolin Lu

Rochester Institute of Technology, Kate Gleason College of Engineering, Microsystems Engineering, Rochester, New York 14623

Opt. Eng. 50(7), 074002 (July 06, 2011). doi:10.1117/1.3595868
History: Received February 28, 2011; Revised May 09, 2011; Accepted May 10, 2011; Published July 06, 2011; Online July 06, 2011
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In this paper, we propose an optical switch based on a metal-insulator-metal plasmonic waveguide with Si3N4 core sandwiched between two gallium (Ga) metal layers. Combining the unique structural phase transition property of gallium, within a total length of only 400 nm, an extinction ratio as high as 7.68 dB can be achieved in the proposed nanoplasmonic structure. The phase transition may be achieved by changing the temperature of the waveguide or by external light excitation.

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© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation

Wangshi Zhao and Zhaolin Lu
"Nanoplasmonic optical switch based on Ga-Si3N4-Ga waveguide", Opt. Eng. 50(7), 074002 (July 06, 2011). ; http://dx.doi.org/10.1117/1.3595868


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