1/F Optimization For A Complementary Metal Oxide Semiconductor Focal Plane Array Input Circuit

Robert James Martin; William R. Herzog

doi:10.1117/12.7977922

1 March 1988 1/F Optimization For A Complementary Metal Oxide Semiconductor Focal Plane Array Input Circuit

Robert James Martin, William R. Herzog

Author Affiliations +

Optical Engineering, Vol. 27, Issue 3, 273246 (March 1988). https://doi.org/10.1117/12.7977922

Abstract

In electro-optical detector systems, the noise characteristics of transresistance amplifiers are sensitive to the incremental conductivity of the photovoltaic detector. In this paper we show that the 1/f noise corner frequency contributed to the noise by the amplifier is a function of the bias applied to the detector. The 1/f noise corner frequency of the diode in cooled focal plane arrays is also a function of the reverse bias, but there is an optimum reverse bias that is not 0 V. This fact becomes important when it is necessary to use complementary metal oxide semiconductor amplifiers that have lame 1/f noise corner frequencies.

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Robert James Martin and William R. Herzog "1/F Optimization For A Complementary Metal Oxide Semiconductor Focal Plane Array Input Circuit," Optical Engineering 27(3), 273246 (1 March 1988). https://doi.org/10.1117/12.7977922

Published: 1 March 1988

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