3 October 2012 Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
Richard Fu, James Pattison
Author Affiliations +
Abstract
Mercury cadmium telluride (HgCdTe) processing must be performed at a low temperature in order to reduce Hg depletion. To meet demand, low-temperature plasma enhanced atomic layer deposition (PE-ALD) is an emerging deposition technology for highly conformal thin films. We comparatively studied the effectiveness of low-temperature PE-ALD by measuring the ALD film roughness, thickness, and dielectric values. Conformal deposition was investigated through scanning electron microscopy images of the Al2O 3 film deposited onto high aspect ratio features dry-etched into HgCdTe. PE-ALD demonstrated conformal coatings of trenches, pillars and holes in advanced HgCdTe infrared sensor architectures.
© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2012/$25.00 © 2012 SPIE
Richard Fu and James Pattison "Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors," Optical Engineering 51(10), 104003 (3 October 2012). https://doi.org/10.1117/1.OE.51.10.104003
Published: 3 October 2012
Lens.org Logo
CITATIONS
Cited by 28 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Aluminum

Atomic layer deposition

Mercury cadmium telluride

Plasma

Semiconducting wafers

Dielectrics

Scanning electron microscopy

Back to Top