Materials, Photonic Devices, and Sensors

Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures

[+] Author Affiliations
Burak Tekcan

Bilkent University, Department of Electrical and Electronics Engineering, Ankara 06800, Turkey

Bilkent University, National Nanotechnology Research Center, Ankara 06800, Turkey

Cagla Ozgit-Akgun

Bilkent University, National Nanotechnology Research Center, Ankara 06800, Turkey

Bilkent University, Institute of Material Science and Nanotechnology, Ankara 06800, Turkey

Sami Bolat

Bilkent University, Department of Electrical and Electronics Engineering, Ankara 06800, Turkey

Bilkent University, National Nanotechnology Research Center, Ankara 06800, Turkey

Necmi Biyikli

Bilkent University, National Nanotechnology Research Center, Ankara 06800, Turkey

Bilkent University, Institute of Material Science and Nanotechnology, Ankara 06800, Turkey

Ali Kemal Okyay

Bilkent University, Department of Electrical and Electronics Engineering, Ankara 06800, Turkey

Bilkent University, National Nanotechnology Research Center, Ankara 06800, Turkey

Bilkent University, Institute of Material Science and Nanotechnology, Ankara 06800, Turkey

Opt. Eng. 53(10), 107106 (Oct 09, 2014). doi:10.1117/1.OE.53.10.107106
History: Received July 5, 2014; Revised September 4, 2014; Accepted September 11, 2014
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Abstract.  Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are demonstrated. Electrical and optical characteristics of the fabricated devices are investigated. Dark current values as low as 14 pA at a 30 V reverse bias are obtained. Fabricated devices exhibit a 15× UV/VIS rejection ratio based on photoresponsivity values at 200 nm (UV) and 390 nm (VIS) wavelengths. These devices can offer a promising alternative for flexible optoelectronics and the complementary metal oxide semiconductor integration of such devices.

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© 2014 Society of Photo-Optical Instrumentation Engineers

Citation

Burak Tekcan ; Cagla Ozgit-Akgun ; Sami Bolat ; Necmi Biyikli and Ali Kemal Okyay
"Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures", Opt. Eng. 53(10), 107106 (Oct 09, 2014). ; http://dx.doi.org/10.1117/1.OE.53.10.107106


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