pn photodiode in 0.35‐μm high-voltage CMOS with 1.2-GHz bandwidth

Reinhard Enne; Bernhard Steindl; Kerstin Schneider-Hornstein; Horst Zimmermann

doi:10.1117/1.OE.53.11.116114

25 November 2014 pn photodiode in 0.35‐μm high-voltage CMOS with 1.2-GHz bandwidth high-voltage CMOS with 1.2-GHz bandwidth

Reinhard Enne, Bernhard Steindl, Kerstin Schneider-Hornstein, Horst Zimmermann

Author Affiliations +

Optical Engineering, Vol. 53, Issue 11, 116114 (November 2014). https://doi.org/10.1117/1.OE.53.11.116114

Abstract

A pn-junction photodiode with a bandwidth in the GHz range is presented. This photodiode is fabricated in a standard 0.35‐μm high-voltage CMOS process with deep n-wells which can isolate negative substrate potentials down to −100 V from the MOS transistors. This photodiode can, therefore, be implemented together with circuits on the same chip. At a reverse bias voltage of −90 V, a bandwidth of 1.2 GHz was measured for 670-nm light. The breakdown voltage of this photodiode is about −180 V.

Citation Download Citation

Reinhard Enne, Bernhard Steindl, Kerstin Schneider-Hornstein, and Horst Zimmermann "pn photodiode in 0.35‐μm high-voltage CMOS with 1.2-GHz bandwidth high-voltage CMOS with 1.2-GHz bandwidth," Optical Engineering 53(11), 116114 (25 November 2014). https://doi.org/10.1117/1.OE.53.11.116114

Published: 25 November 2014

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available