Materials, Photonic Devices, and Sensors

Effect of annealing on the structural and UV photoluminescence properties of Sb-doped SnO2 films deposited on Al2O3 (0001) substrates by RF magnetron sputtering

[+] Author Affiliations
Xianjin Feng, Yi Luo, Caina Luan

Shandong University, School of Physics, 27 Shandanan Road, Jinan 250100, China

Opt. Eng. 53(11), 117111 (Dec 01, 2014). doi:10.1117/1.OE.53.11.117111
History: Received September 15, 2014; Accepted October 27, 2014
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Abstract.  The antimony-doped tin oxide (SnO2Sb) films have been deposited on the Al2O3 (0001) substrates by RF magnetron sputtering. The influence of annealing on the structural and photoluminescence (PL) properties of the SnO2Sb films was investigated. The prepared samples were polycrystalline films having a rutile structure of pure SnO2 and a preferred orientation along the (110) direction, with an improvement in the film crystallinity observed after annealing. An ultraviolet PL peak near 334 nm was observed at room temperature both before and after annealing. The corresponding PL mechanism was discussed in detail.

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© 2014 Society of Photo-Optical Instrumentation Engineers

Citation

Xianjin Feng ; Yi Luo and Caina Luan
"Effect of annealing on the structural and UV photoluminescence properties of Sb-doped SnO2 films deposited on Al2O3 (0001) substrates by RF magnetron sputtering", Opt. Eng. 53(11), 117111 (Dec 01, 2014). ; http://dx.doi.org/10.1117/1.OE.53.11.117111


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