Materials, Photonic Devices, and Sensors

Gap-optimized Moiré phase imaging alignment for proximity lithography

[+] Author Affiliations
Jiangping Zhu

Sichuan University, School of Computer Science and Technology, Chengdu 610064, China

Song Hu

Chinese Academy of Sciences, State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chengdu 610209, China

Zhisheng You

Sichuan University, School of Computer Science and Technology, Chengdu 610064, China

Xianyu Su

Sichuan University, School of Electronics and Information, Chengdu 610064, China

Opt. Eng. 54(1), 017105 (Jan 29, 2015). doi:10.1117/1.OE.54.1.017105
History: Received November 3, 2014; Accepted January 5, 2015
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Abstract.  The proposed four-quadrant Moiré alignment scheme to detect the misalignment between mask and wafer for proximity lithography can achieve the alignment accuracy with nanometer level. When implementing the scheme, however, the distribution of Moiré fringes associated with the mask–wafer gap indeed goes against the alignment, making the gap optimization highly urgent. The optimization model is established, and numerical simulation as well as experimental verification is also provided. Furthermore, an alignment accuracy of 3nm with the illumination wavelength of 632.8 nm is experimentally attained. Simultaneously, the design mechanism of alignment marks for improving the availability of the alignment scheme is discussed.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Jiangping Zhu ; Song Hu ; Zhisheng You and Xianyu Su
"Gap-optimized Moiré phase imaging alignment for proximity lithography", Opt. Eng. 54(1), 017105 (Jan 29, 2015). ; http://dx.doi.org/10.1117/1.OE.54.1.017105


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