Materials, Photonic Devices, and Sensors

High temperature coefficient of resistance molybdenum oxide and nickel oxide thin films for microbolometer applications

[+] Author Affiliations
Yao O. Jin, Mark W. Horn

The Pennsylvania State University, Department of Engineering Science and Mechanics, University Park, Pennsylvania 16802, United States

David Saint John

The Pennsylvania State University, Department of Material Science and Engineering, University Park, Pennsylvania 16802, United States

Nikolas J. Podraza

University of Toledo, Department of Physics and Astronomy & Wright Center for Photovoltaics Innovation and Commercialization, Toledo, Ohio 43606, United States

Thomas N. Jackson

The Pennsylvania State University, Department of Electrical Engineering, University Park, Pennsylvania 16802, United States

Opt. Eng. 54(3), 037101 (Mar 04, 2015). doi:10.1117/1.OE.54.3.037101
History: Received November 8, 2014; Accepted February 9, 2015
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Abstract.  Molybdenum oxide (MoOx) and nickel oxide (NiOx) thin films were deposited by reactive biased target ion beam deposition. MoOx thin film resistivity varied from 3 to 2000Ω·cm with a temperature coefficient of resistance (TCR) from 1.7% to 3.2%/K, and NiOx thin film resistivity varied from 1 to 300Ω·cm with a TCR from 2.2% to 3.3%/K, both easily controlled by varying the oxygen partial pressure. Biased target ion beam deposited high TCR MoOx and NiOx thin films are polycrystalline semiconductors and have good stability in air. Compared with commonly used vanadium oxide thin films, MoOx or NiOx thin films offer improved process control for resistive temperature sensors.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Topics

Thin films ; Oxygen

Citation

Yao O. Jin ; David Saint John ; Nikolas J. Podraza ; Thomas N. Jackson and Mark W. Horn
"High temperature coefficient of resistance molybdenum oxide and nickel oxide thin films for microbolometer applications", Opt. Eng. 54(3), 037101 (Mar 04, 2015). ; http://dx.doi.org/10.1117/1.OE.54.3.037101


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