Materials, Photonic Devices, and Sensors

Analysis of simulation of multiterminal electro-optic modulator based on p-n junction in reverse bias

[+] Author Affiliations
Kaikai Xu, Jianming Zhao

University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices, No. 4, Section 2, North Jianshe Road, Chengdu 610054, China

Siyang Liu, Weifeng Sun

Southeast University, National ASIC System Engineering Research Center, Nanjing 210096, China

Guannpyng Li

California Institute for Telecommunications and Information Technology, Irvine, California 92697, United States

Opt. Eng. 54(5), 057104 (May 07, 2015). doi:10.1117/1.OE.54.5.057104
History: Received March 9, 2015; Accepted April 14, 2015
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Abstract.  A study of a silicon metal oxide semiconductor (MOS)-type light-emitting device (LED) in which the p–n junction works under a reverse bias and the gate voltage is applied to modulate the electric field distribution from the p+ region through the n region. The use of gate voltage could result in the generation of a field-induced junction which leads to a decrease of the operating voltage of the LED compared to the two terminal p–n junction LED. The dynamics of the photonic emission in the structure and its related response time, and then a more detailed theoretical and simulation understanding of the photonic emission is achieved, which definitively demonstrates the capability of the device in which a reverse-bias region showing light modulation with multi-GHz bandwidth and gigabit-per-second data rate at near-infrared wavelength. Although the emitted optical power is weak, it is advantageous to utilize the device in all-silicon optoelectronic integrated circuits, especially for short-distance on-chip optical interconnects achieved by standard complementary MOS technology.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Kaikai Xu ; Siyang Liu ; Jianming Zhao ; Weifeng Sun and Guannpyng Li
"Analysis of simulation of multiterminal electro-optic modulator based on p-n junction in reverse bias", Opt. Eng. 54(5), 057104 (May 07, 2015). ; http://dx.doi.org/10.1117/1.OE.54.5.057104


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