OE Letters

Thick detection zone single-photon avalanche diode fabricated in 0.35  μm complementary metal-oxide semiconductors

[+] Author Affiliations
Bernhard Steindl, Reinhard Enne, Horst Zimmermann

Vienna University of Technology, Institute of Electrodynamics, Microwave and Circuit Engineering, Gusshausstrasse 25/354, 1040 Vienna, Austria

Opt. Eng. 54(5), 050503 (May 22, 2015). doi:10.1117/1.OE.54.5.050503
History: Received February 23, 2015; Accepted May 4, 2015
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Abstract.  An avalanche photodiode (APD) fabricated in 0.35μm high-voltage complementary metal-oxide semiconductor (CMOS) technology, which was originally optimized for linear mode applications, is characterized in Geiger mode operation. This work shows that the used design concept is also suitable for single-photon detection applications and achieves a photon detection efficiency of 22.1% at 785 nm due to a thick detection zone and 3.5 V excess bias. At this operation point, the single-photon APD achieves good results regarding afterpulsing probability (3.4%) and dark count rate (46 kHz) with respect to the large active diameter of 86μm.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Bernhard Steindl ; Reinhard Enne and Horst Zimmermann
"Thick detection zone single-photon avalanche diode fabricated in 0.35  μm complementary metal-oxide semiconductors", Opt. Eng. 54(5), 050503 (May 22, 2015). ; http://dx.doi.org/10.1117/1.OE.54.5.050503


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