Imaging Components, Systems, and Processing

High-temperature operation of interband cascade infrared photodetectors with cutoff wavelengths near 8  μm

[+] Author Affiliations
Hossein Lotfi, Lu Li, Rui Q. Yang

University of Oklahoma, School of Electrical and Computer Engineering, Norman, Oklahoma 73019, United States

Lin Lei

University of Oklahoma, School of Electrical and Computer Engineering, Norman, Oklahoma 73019, United States

University of Oklahoma, Homer L. Dodge Department of Physics and Astronomy, Norman, Oklahoma 73019, United States

Joel C. Keay, Matthew B. Johnson

University of Oklahoma, Homer L. Dodge Department of Physics and Astronomy, Norman, Oklahoma 73019, United States

Yueming Qiu, Dmitri Lubyshev, Joel M. Fastenau, Amy W. K. Liu

IQE, Inc., 119 Technology Drive, Bethlehem, Pennsylvania 18015, United States

Opt. Eng. 54(6), 063103 (Jun 11, 2015). doi:10.1117/1.OE.54.6.063103
History: Received March 16, 2015; Accepted May 13, 2015
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Abstract.  We present our recent studies on a set of three different type-II InAs/GaSb superlattice interband cascade infrared (IR) photodetectors. Electroluminescence and x-ray diffraction measurements suggest that all the grown structures had comparable material qualities. Two of these detectors were two- and three-stage structures with regular-illumination configurations and the other was a two-stage structure with a reverse-illumination configuration. The 100% cutoff wavelength for these detectors was 6.2μm at 78 K, extending to 8μm at 300 K. At T=125K and higher temperatures, we were able to observe the benefits of the three-stage detector over the two-stage device in terms of lower dark current and higher detectivity. We conjecture that the imperfections from the device growth and fabrication had a substantial effect on the low-temperature device performance and were responsible for the unexpected behavior at these temperatures. We also found that the zero-bias photoresponse increased with temperatures up to 200 K, which was indicative of efficient collection of photogenerated carriers at high temperatures. These detectors were able to operate at temperatures up to 340 K with a cutoff wavelength longer than 8μm. This demonstrates the advantage of the interband cascade structures to achieve high-temperature operation for long-wave IR photodetectors.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Hossein Lotfi ; Lin Lei ; Lu Li ; Rui Q. Yang ; Joel C. Keay, et al.
"High-temperature operation of interband cascade infrared photodetectors with cutoff wavelengths near 8  μm", Opt. Eng. 54(6), 063103 (Jun 11, 2015). ; http://dx.doi.org/10.1117/1.OE.54.6.063103


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