Lasers, Fiber Optics, and Communications

Wideband 20-wavelength 1.3-μm distributed feedback semiconductor laser array using common holographic exposure

[+] Author Affiliations
Linlin Lu

Jiangsu Posts & Telecommunications Planning and Designing Institute Co. Ltd., Nanxijiang East Street, Jiangsu Province, Nanjing 210019, China

Nanjing University, Microwave-Photonics Technology Laboratory, Nanjing National Laboratory of Microstructures and School of Engineering and Applied Sciences, Nanjing 210093, China

Renjia Guo, Rui Liu, Lianyan Li

Nanjing University, Microwave-Photonics Technology Laboratory, Nanjing National Laboratory of Microstructures and School of Engineering and Applied Sciences, Nanjing 210093, China

Xuqi Chen, Hao He

Jiangsu Posts & Telecommunications Planning and Designing Institute Co. Ltd., Nanxijiang East Street, Jiangsu Province, Nanjing 210019, China

Opt. Eng. 54(7), 076108 (Jul 27, 2015). doi:10.1117/1.OE.54.7.076108
History: Received May 16, 2015; Accepted June 22, 2015
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Abstract.  The first experimental realization of a 20-wavelength distributed feedback semiconductor laser array with a λ/4 equivalent phase shift using common holographic exposure in the 1.3-μm wavelength domain is reported. It shows very good linearity in lasing wavelengths with a deviation from 0.5 to 0.45 nm. The threshold currents are between 13 and 17 mA. The side mode suppression ratios are all larger than 40 dB under the bias currents of 70 mA. The slope efficiencies at room temperature are all about 0.4W/A. However, it only changes the micrometer-level sampling structures while the seed grating is uniform. Therefore, its fabrication cost is low.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Linlin Lu ; Renjia Guo ; Rui Liu ; Xuqi Chen ; Hao He, et al.
"Wideband 20-wavelength 1.3-μm distributed feedback semiconductor laser array using common holographic exposure", Opt. Eng. 54(7), 076108 (Jul 27, 2015). ; http://dx.doi.org/10.1117/1.OE.54.7.076108


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