Optical Design and Engineering

MOCVD grown HgCdTe barrier detectors for MWIR high-operating temperature operation

[+] Author Affiliations
Małgorzata Kopytko, Waldemar Gawron, Piotr Martyniuk, Paweł Madejczyk, Krzysztof Jóźwikowski, Andrzej Kowalewski, Olga Markowska, Antoni Rogalski

Military University of Technology, Institute of Applied Physics, 2 Kaliskiego Street, Warsaw 00-908, Poland

Artur Kębłowski

Vigo System S.A., 129/133 Poznanska Street, Ozarów Mazowiecki 05-850, Poland

Opt. Eng. 54(10), 105105 (Oct 14, 2015). doi:10.1117/1.OE.54.10.105105
History: Received May 27, 2015; Accepted August 26, 2015
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Abstract.  In the last decade, new architecture designs such as nBn devices or unipolar barrier photodiodes have been proposed to achieve high-operating temperature (HOT) detectors. This idea has been also implemented in HgCdTe ternary material systems. However, the implementation of this detector structure in an HgCdTe material system is not straightforward due to the existence of a valence band discontinuity (barrier) at the absorber-barrier interface. We report on midwavelength infrared HgCdTe barrier detectors with a zero valence band offset, grown by metal organic chemical vapor deposition on GaAs substrates. The experiments indicate the influence of the barrier on the electrical and optical performances of the p+BpnN+ device. The devices exhibit very low-dark current densities in the range of (23)×103A/cm2 at 230 K and a high-current responsivity of about 2A/W in the wide range of reverse bias voltage. The estimated thermal activation energy of about 0.33 eV is close to the full Hg0.64Cd0.36Te bandgap, which indicates diffusion limited dark currents.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Małgorzata Kopytko ; Artur Kębłowski ; Waldemar Gawron ; Piotr Martyniuk ; Paweł Madejczyk, et al.
"MOCVD grown HgCdTe barrier detectors for MWIR high-operating temperature operation", Opt. Eng. 54(10), 105105 (Oct 14, 2015). ; http://dx.doi.org/10.1117/1.OE.54.10.105105


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