OE Letters

Monolithically integrated avalanche photodiode receiver in 0.35 μm bipolar complementary metal oxide semiconductor

[+] Author Affiliations
Tomislav Jukić, Bernhard Steindl, Reinhard Enne, Horst Zimmermann

Vienna University of Technology, Institute of Electrodynamics, Microwave and Circuit Engineering, Gusshausstrasse 25/354, Vienna 1040, Austria

Opt. Eng. 54(11), 110502 (Nov 05, 2015). doi:10.1117/1.OE.54.11.110502
History: Received August 5, 2015; Accepted October 8, 2015
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Abstract.  We present the first optoelectronic integrated bipolar complementary metal oxide semiconductor (BiCMOS) receiver chip with an avalanche photodiode (APD). A large 200-μm-diameter APD connected to a high-speed transimpedance amplifier designed for a 2-Gbps optical wireless communication system is proposed. The complete chip was realized in a 0.35-μm silicon BiCMOS technology. Due to the thick intrinsic zone and multiplication gain, the responsivity of the APD reaches a value of up to 120A/W for a wavelength of 675 nm. Furthermore, the capacitance of the APD is <500fF for reverse bias voltages above 18 V. The receiver has a supply voltage of 3.3 V with a current consumption of 76 mA. The delivered 50-Ω single-ended output swing is 550mVpp and the overall transimpedance is 260kΩ with 1.02-GHz bandwidth. The achieved data rate is 2 Gbps with a sensitivity of 30.3dBm at a bit error rate <109.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Tomislav Jukić ; Bernhard Steindl ; Reinhard Enne and Horst Zimmermann
"Monolithically integrated avalanche photodiode receiver in 0.35 μm bipolar complementary metal oxide semiconductor", Opt. Eng. 54(11), 110502 (Nov 05, 2015). ; http://dx.doi.org/10.1117/1.OE.54.11.110502


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