Monolithically integrated avalanche photodiode receiver in 0.35 μm bipolar complementary metal oxide semiconductor

Tomislav Jukić; Bernhard Steindl; Reinhard Enne; Horst Zimmermann

doi:10.1117/1.OE.54.11.110502

5 November 2015 Monolithically integrated avalanche photodiode receiver in 0.35 μm bipolar complementary metal oxide semiconductor

Tomislav Jukić, Bernhard Steindl, Reinhard Enne, Horst Zimmermann

Author Affiliations +

Optical Engineering, Vol. 54, Issue 11, 110502 (November 2015). https://doi.org/10.1117/1.OE.54.11.110502

Abstract

We present the first optoelectronic integrated bipolar complementary metal oxide semiconductor (BiCMOS) receiver chip with an avalanche photodiode (APD). A large 200-μm-diameter APD connected to a high-speed transimpedance amplifier designed for a 2-Gbps optical wireless communication system is proposed. The complete chip was realized in a 0.35-μm silicon BiCMOS technology. Due to the thick intrinsic zone and multiplication gain, the responsivity of the APD reaches a value of up to 120 A/W for a wavelength of 675 nm. Furthermore, the capacitance of the APD is <500 fF for reverse bias voltages above 18 V. The receiver has a supply voltage of 3.3 V with a current consumption of 76 mA. The delivered 50-Ω single-ended output swing is 550 mV_pp and the overall transimpedance is 260 kΩ with 1.02-GHz bandwidth. The achieved data rate is 2 Gbps with a sensitivity of −30.3 dBm at a bit error rate <10⁻⁹.

Citation Download Citation

Tomislav Jukić, Bernhard Steindl, Reinhard Enne, and Horst Zimmermann "Monolithically integrated avalanche photodiode receiver in 0.35 μm bipolar complementary metal oxide semiconductor," Optical Engineering 54(11), 110502 (5 November 2015). https://doi.org/10.1117/1.OE.54.11.110502

Published: 5 November 2015

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