Optical Design and Engineering

Optimized double-sided pattern design on a patterned sapphire substrate for flip-chip GaN-based light-emitting diodes

[+] Author Affiliations
Zhen Che

Jinan University, College of Information Science and Technology, 601 Huangpu Avenue West, Guangzhou, Guangdong Province 510632, China

Jun Zhang, Jianhui Yu, Huihui Lu, Yunhan Luo, Heyuan Guan, Zhe Chen

Jinan University, Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes, 601 Huangpu Avenue West, Guangzhou, Guangdong Province 510632, China

Jinan University, Department of Optoelectronic Engineering, 601 Huangpu Avenue West, Guangzhou, Guangdong Province 510632, China

Xinyu Yu, Mengyuan Xie

Jinan University, Department of Optoelectronic Engineering, 601 Huangpu Avenue West, Guangzhou, Guangdong Province 510632, China

Opt. Eng. 54(11), 115108 (Nov 18, 2015). doi:10.1117/1.OE.54.11.115108
History: Received June 24, 2015; Accepted October 20, 2015
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Abstract.  This study reports on the development and testing of a cost- and time-effective means to optimize a double-sided hemispherical patterned sapphire substrate (PSS) for highly efficient flip-chip GaN-based light-emitting diodes (LEDs). A simulation is conducted to study how light extraction efficiency (LEE) changed as a function of alteration in the parameters of the unit hemisphere for LEDs that are fabricated on a hemispherical PSS. Results show that the LEE of LED flip chip could be enhanced with the optimized hemispherical PSS by over 0.508 and is 115.3% higher than that of flip-chip LEDs with non-PSS. This study confirms the high efficiency and excellent capability of the optimized hemispherical PSS pattern to improve LED efficacy.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Zhen Che ; Jun Zhang ; Xinyu Yu ; Mengyuan Xie ; Jianhui Yu, et al.
"Optimized double-sided pattern design on a patterned sapphire substrate for flip-chip GaN-based light-emitting diodes", Opt. Eng. 54(11), 115108 (Nov 18, 2015). ; http://dx.doi.org/10.1117/1.OE.54.11.115108


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