Instrumentation, Techniques, and Measurement

Frequency- and time-domain simulations of semiconductor optical amplifiers using equivalent circuit modeling

[+] Author Affiliations
Rafael C. Figueiredo, Napoleão S. Ribeiro, Evandro Conforti

University of Campinas, Department of Communications, Faculty of Electrical and Computer Engineering, Avenida Albert Einstein 400, Campinas, SP 13083-852, Brazil

Cristiano M. Gallep

University of Campinas, Division of Telecommunication Technology, Faculty of Technology, Rua Paschoal Marmo 1888, Limeira, SP 13484-370, Brazil

Opt. Eng. 54(11), 114107 (Nov 30, 2015). doi:10.1117/1.OE.54.11.114107
History: Received March 26, 2015; Accepted October 28, 2015
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Abstract.  We propose an equivalent circuit modeling for a chip-on-carrier and for two encapsulated semiconductor optical amplifiers (SOAs). The models include main parasitic leaks and were used in reflection and transmission simulations, showing good agreement with experimental data. The model for each SOA is validated, comparing the simulated results with experimental data from SOAs operating as high-speed electro-optical switches, reaching rise times below 200 ps.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Rafael C. Figueiredo ; Napoleão S. Ribeiro ; Cristiano M. Gallep and Evandro Conforti
"Frequency- and time-domain simulations of semiconductor optical amplifiers using equivalent circuit modeling", Opt. Eng. 54(11), 114107 (Nov 30, 2015). ; http://dx.doi.org/10.1117/1.OE.54.11.114107


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