Special Section on 2-D Materials for Optics and Photonics

Passively Q-switched Nd:GdTaO4 laser by graphene oxide saturable absorber

[+] Author Affiliations
Bingyuan Zhang, Qi Song, Guoju Wang, Yajing Gao, Minghong Wang, Wenjun Wang

Liaocheng University, School of Physics Science and Information Engineering, Shandong Key Laboratory of Optical Communication Science and Technology, Hunan Street No. 1, Liaocheng 252059, China

Qingli Zhang

Chinese Academy of Sciences, Anhui Institute of Optics and Fine Mechanics, The Key Laboratory of Photonic Devices and Materials of Anhui, Shushanhu Street No. 350, Hefei 230031, China

Opt. Eng. 55(8), 081305 (Dec 21, 2015). doi:10.1117/1.OE.55.8.081305
History: Received September 23, 2015; Accepted November 17, 2015
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Abstract.  We experimentally demonstrated a laser diode-pumped Q-switched Nd:GdTaO4 crystal laser at 1066 nm using a multilayer graphene oxide as the saturable absorber (GOSA). The GOSA is fabricated by transferring the liquid-phase-exfoliated GO nanosheets onto a K9 glass substrate. When the GOSA was inserted into the plano–plano laser cavity, a stable Q-switched laser operation is achieved with a maximum average output power of 0.382 W and repetition rate of 362 kHz. The shortest pulse duration is 194 ns and the single pulse energy is about 1.05μJ.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Bingyuan Zhang ; Qi Song ; Guoju Wang ; Yajing Gao ; Qingli Zhang, et al.
"Passively Q-switched Nd:GdTaO4 laser by graphene oxide saturable absorber", Opt. Eng. 55(8), 081305 (Dec 21, 2015). ; http://dx.doi.org/10.1117/1.OE.55.8.081305


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