OE Letters

A memristor-based pixel implementing light-to-resistance conversion

[+] Author Affiliations
Olufemi A. Olumodeji

Center for Materials and Microsystems, Fondazione Bruno Kessler, Via Sommarive 18, Trento 38123, Italy

University of Trento, Department of Industrial Engineering, via Sommarive, 9, Trento 38123, Italy

Alessandro P. Bramanti

STMicroelectronics Srl, Via per Arnesano, 16, Lecce 73100, Italy

Massimo Gottardi

Center for Materials and Microsystems, Fondazione Bruno Kessler, Via Sommarive 18, Trento 38123, Italy

Salvatore Iannotta

CNR-IMEM (National Research Council, Institute of Materials for Electronics and Magnetism), Parco Area delle Scienze 37/A, Parma PR Emilia Romagna 43124, Italy

Opt. Eng. 55(2), 020501 (Feb 08, 2016). doi:10.1117/1.OE.55.2.020501
History: Received October 12, 2015; Accepted January 6, 2016
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Abstract.  This letter reports a pixel architecture that implements a light-to-resistance encoder exploiting the properties of a memristor. A light-to-frequency (L2F) converter is adopted to drive a memristor with pulses, thus changing its resistance according with the light intensity. In a conventional L2F implementation, a binary counter is needed to store the number of pulses generated within the exposure time (Ti). In the proposed circuit, the binary counter has been replaced with an analog counterpart, made of a single memristor. This turns into a smaller pixel pitch, compared with an all-CMOS solution and analog nonvolatile characteristics. The proposed circuit has been simulated in a 3.3 V, 0.35  μm CMOS process, while the memristor behavior relies on the HP model.

Figures in this Article
© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Olufemi A. Olumodeji ; Alessandro P. Bramanti ; Massimo Gottardi and Salvatore Iannotta
"A memristor-based pixel implementing light-to-resistance conversion", Opt. Eng. 55(2), 020501 (Feb 08, 2016). ; http://dx.doi.org/10.1117/1.OE.55.2.020501


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