Materials, Photonic Devices, and Sensors

Cross-talk characterization of dense single-photon avalanche diode arrays in CMOS 150-nm technology

[+] Author Affiliations
Hesong Xu, David Stoppa

Fondazione Bruno Kessler, Integrated Radiation and Image Sensors Division, Via Sommarive 18, Trento 38123, Italy

University of Trento, Department of Industrial Engineering, Via Sommarive 5, Trento 38123, Italy

Lucio Pancheri, Gian-Franco Dalla Betta

University of Trento, Department of Industrial Engineering, Via Sommarive 5, Trento 38123, Italy

Leo H. C. Braga

Fondazione Bruno Kessler, Integrated Radiation and Image Sensors Division, Via Sommarive 18, Trento 38123, Italy

Opt. Eng. 55(6), 067102 (Jun 01, 2016). doi:10.1117/1.OE.55.6.067102
History: Received March 14, 2016; Accepted May 9, 2016
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Abstract.  Cross-talk characterization results of high-fill-factor single-photon avalanche diode (SPAD) arrays in CMOS 150-nm technology are reported and discussed. Three different SPAD structures were designed with two different sizes (15.6 and 25.6  μm pitch) and three guard ring widths (0.6, 1.1, and 1.6  μm). Each SPAD was implemented in an array, composed of 25 (5×5) devices, which can be separately activated. Measurement results show that the average cross-talk probability is well below 1% for the shallow-junction SPAD structure with 15.6  μm pitch and 39.9% fill factor, and 1.45% for the structure with 25.6  μm pitch and 60.6% fill factor. An increase of cross-talk probability with the excess bias voltage is observed.

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© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Hesong Xu ; Lucio Pancheri ; Leo H. C. Braga ; Gian-Franco Dalla Betta and David Stoppa
"Cross-talk characterization of dense single-photon avalanche diode arrays in CMOS 150-nm technology", Opt. Eng. 55(6), 067102 (Jun 01, 2016). ; http://dx.doi.org/10.1117/1.OE.55.6.067102


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