A series of Fe-doped trilayer films were prepared successfully by using the ion-implantation technique. The aim of the ion implantation was to enhance charge transfer and to reduce charge recombination. A maximum conversion efficiency of 4.86% was achieved in cells using Fe-ion-implanted electrodes with the illumination of . It is 14.1% higher than that of the cells without ion implantations. The significant improvement in conversion efficiency by Fe-ion implantation could be contributed to the enhancement of dye uptake and charge transfer, as indicated from the incident photon-to-collected electron conversion efficiency and ultraviolet-visible measurements. Furthermore, the implanted Fe-ions introduce impurity levels in the bandgap of , and this improves the electron injection efficiency from lowest unoccupied molecular orbital of excited N719 into the conduction band of .