Simulated characteristics of a heterojunction phototransistor with Ge1-xSnx alloy as base

Dur Vesh Kumar; Ankit Kumar Pandey; Rikmantra Basu; Anuj K. Sharma

doi:10.1117/1.OE.55.12.127103

23 December 2016 Simulated characteristics of a heterojunction phototransistor with Ge_1-xSn_x alloy as base

Dur Vesh Kumar, Ankit Kumar Pandey, Rikmantra Basu, Anuj K. Sharma

Author Affiliations +

Optical Engineering, Vol. 55, Issue 12, 127103 (December 2016). https://doi.org/10.1117/1.OE.55.12.127103

Abstract

Groups III-V compound semiconductors and their alloys are the main photodetecting elements for the entire fiber optic telecommunication band. However, the recent successful growth of Ge1-xSnx alloy on Ge virtual substrates on Si platform makes the group IV alloys a potential competitor. Ge1-xSnx alloy shows direct band gap and has an absorption coefficient almost 10 times higher than that of Ge. The photonic devices are complementary metal–oxide–semiconductor compatible. We have considered an n-Ge/p+-Ge1-xSnx/n-Ge1-xSnx heterojunction phototransistor (HPT) and studied the variations of terminal currents by considering the Gummel Poon model of HPT, and values of optical and current gains, photocurrent, and responsivity have been obtained. The performance of the device as a photodetector at fiber optic communication wavelengths seems quite encouraging to justify the use of GeSn-based HPTs as a replacement of III-IV semiconductor-based photodetectors.

Citation Download Citation

Dur Vesh Kumar, Ankit Kumar Pandey, Rikmantra Basu, and Anuj K. Sharma "Simulated characteristics of a heterojunction phototransistor with Ge_1-xSn_x alloy as base," Optical Engineering 55(12), 127103 (23 December 2016). https://doi.org/10.1117/1.OE.55.12.127103

Received: 13 August 2016; Accepted: 2 December 2016; Published: 23 December 2016

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