Special Section on Infrared Sensors

Uncooled middle wavelength infrared photoconductors based on (111) and (100) oriented HgCdTe

[+] Author Affiliations
Paweł Madejczyk, Waldemar Gawron, Piotr Martyniuk, Małgorzata Kopytko, Dawid Stępień, Jarosław Rutkowski, Antoni Rogalski

Military University of Technology, Institute of Applied Physics, Kaliskiego 2, 00-908 Warsaw, Poland

Artur Kębłowski, Józef Piotrowski, Adam Piotrowski

VIGO System S.A., 129/133 Poznańska Street, 05-850 Ożarów Mazowiecki, Poland

Opt. Eng. 56(9), 091602 (Jan 05, 2017). doi:10.1117/1.OE.56.9.091602
History: Received July 5, 2016; Accepted November 29, 2016
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Abstract.  We present progress in metal organic chemical vapor deposition (MOCVD) growth of (100) HgCdTe epilayers achieved recently at the Institute of Applied Physics, Military University of Technology and Vigo System S.A. It is shown that MOCVD technology is an excellent tool for the fabrication of different HgCdTe detector structures with a wide range of composition, donor/acceptor doping, and without post grown ex-situ annealing. Surface morphology, residual background concentration, and acceptor doping efficiency are compared in (111) and (100) oriented HgCdTe epilayers. At elevated temperatures, the carrier lifetime in measured p-type photoresistors is determined by Auger 7 process with about one order of magnitude difference between theoretical and experimental values. Particular progress has been achieved in the growth of (100) HgCdTe epilayers for medium wavelength infrared photoconductors operated in high-operating temperature conditions.

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© 2017 Society of Photo-Optical Instrumentation Engineers

Citation

Paweł Madejczyk ; Artur Kębłowski ; Waldemar Gawron ; Piotr Martyniuk ; Małgorzata Kopytko, et al.
"Uncooled middle wavelength infrared photoconductors based on (111) and (100) oriented HgCdTe", Opt. Eng. 56(9), 091602 (Jan 05, 2017). ; http://dx.doi.org/10.1117/1.OE.56.9.091602


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