Special Section on Infrared Sensors

Extended wavelength infrared photodetectors

[+] Author Affiliations
Dilip Chauhan, A. G. Unil Perera

Georgia State University, Department of Physics and Astronomy, Atlanta, Georgia, United States

Lianhe Li, Li Chen, Suraj P. Khanna, Edmund H. Linfield

University of Leeds, School of Electronic and Electrical Engineering, Leeds, United Kingdom

Opt. Eng. 56(9), 091605 (Feb 07, 2017). doi:10.1117/1.OE.56.9.091605
History: Received December 16, 2016; Accepted January 25, 2017
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Abstract.  Extension of the wavelength threshold of an infrared detector beyond λt=hc/Δ is demonstrated, without reducing the minimum energy gap (Δ) of the material. Specifically, a photodetector designed with Δ=0.40  eV, and a corresponding λt=3.1  μm, was shown to have an extended threshold of 45  μm at 5.3 K, at zero bias. Under negative and positive applied bias, this range was further extended to 60 and 68  μm, respectively, with the photoresponse becoming stronger at increased biases, but the spectral threshold remained relatively constant. The observed wavelength extension arises from an offset between the two potential barriers in the device. Without the offset, another detector with Δ=0.30  eV showed a photoresponse with the expected wavelength threshold of 4  μm.

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© 2017 Society of Photo-Optical Instrumentation Engineers

Citation

Dilip Chauhan ; A. G. Unil Perera ; Lianhe Li ; Li Chen ; Suraj P. Khanna, et al.
"Extended wavelength infrared photodetectors", Opt. Eng. 56(9), 091605 (Feb 07, 2017). ; http://dx.doi.org/10.1117/1.OE.56.9.091605


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