Instrumentation, Techniques, and Measurement

Model-free determination of optical constants: application to undoped and Ga-doped ZnO

[+] Author Affiliations
David C. Look

Wright State University, Semiconductor Research Center, Dayton, Ohio, United States

Air Force Research Laboratory Sensors Directorate, Wright-Patterson Air Force Base, Dayton, Ohio, United States

Buguo Wang

Wright State University, Semiconductor Research Center, Dayton, Ohio, United States

Kevin D. Leedy

Air Force Research Laboratory Sensors Directorate, Wright-Patterson Air Force Base, Dayton, Ohio, United States

Opt. Eng. 56(3), 034112 (Mar 21, 2017). doi:10.1117/1.OE.56.3.034112
History: Received December 12, 2016; Accepted March 7, 2017
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Abstract.  For single slabs of uniform material, such as bulk semiconductors, we derive closed-form expressions for absorption and reflection coefficients, α and R, respectively, in terms of measured reflectance and transmittance, Rm and Tm. The formula for α can replace the several commonly used approximations for α as a function of Tm and in particular does not require αd1, where d is the thickness. Thus, it can be applied to weak impurity absorptions, such as Fe absorption in Fe-doped GaN. Finally, the real (η) and imaginary (κ) parts of the index of refraction (n=η+iκ) can be obtained from α and R and agree well with η and κ results obtained from other experiments. For multilayer structures, “effective” values of α, R, η, and κ are obtained, but they can often be assigned to a particular layer. This technique has been successfully applied to many bulk and layered structures.

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© 2017 Society of Photo-Optical Instrumentation Engineers

Citation

David C. Look ; Buguo Wang and Kevin D. Leedy
"Model-free determination of optical constants: application to undoped and Ga-doped ZnO", Opt. Eng. 56(3), 034112 (Mar 21, 2017). ; http://dx.doi.org/10.1117/1.OE.56.3.034112


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