Materials, Photonic Devices, and Sensors

Electrical and optical performances of InGaAs/GaAsSb superlattice short-wavelength infrared detectors

[+] Author Affiliations
Chuan Jin

Shanghai Institute of Technical Physics, Key Laboratory of Infrared Imaging Materials and Detector, Chinese Academy of Sciences, Shanghai, China

University of Chinese Academy of Sciences, Beijing, China

Jianxin Chen, Qingqing Xu, Chengzhang Yu, Li He

Shanghai Institute of Technical Physics, Key Laboratory of Infrared Imaging Materials and Detector, Chinese Academy of Sciences, Shanghai, China

Opt. Eng. 56(5), 057102 (May 04, 2017). doi:10.1117/1.OE.56.5.057102
History: Received November 3, 2016; Accepted April 19, 2017
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Abstract.  We report on a p-i-n photodetector based on type II InGaAs/GaAsSb SLs with a cutoff wavelength of 2.5  μm at room temperature. High quality materials were grown on an n-type (100) InP substrate by molecular beam epitaxy. Photoluminescence spectroscopy peak of the SLs around 2.5  μm and atomic steps in the atomic force microscope image were clearly observed. A device with the 100% cutoff wavelength of 2.5  μm at 293 K was fabricated. Temperature-dependent current-voltage measurements show that the diffusion current and generation-recombination current dominate at temperatures higher than 200 K while the generation-recombination current and trap-assisted tunneling current dominate at temperatures below 200 K. The optical response measurement quantum efficiency increases with reverse bias, and a diffusion length of 0.3  μm was extracted. The cause of the small diffusion length and possible approaches to improve it were briefly discussed.

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© 2017 Society of Photo-Optical Instrumentation Engineers

Citation

Chuan Jin ; Jianxin Chen ; Qingqing Xu ; Chengzhang Yu and Li He
"Electrical and optical performances of InGaAs/GaAsSb superlattice short-wavelength infrared detectors", Opt. Eng. 56(5), 057102 (May 04, 2017). ; http://dx.doi.org/10.1117/1.OE.56.5.057102


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