Materials, Photonic Devices, and Sensors

Near-infrared (1 to 4  μm) control of plasmonic resonance wavelength in Ga-doped ZnO

[+] Author Affiliations
David C. Look

Wright State University, Semiconductor Research Center, Dayton, Ohio, United States

Air Force Research Laboratory Sensors Directorate, Wright-Patterson AFB, Ohio, United States

Kevin D. Leedy, Bruce B. Claflin

Air Force Research Laboratory Sensors Directorate, Wright-Patterson AFB, Ohio, United States

Gordon J. Grzybowski

Air Force Research Laboratory Sensors Directorate, Wright-Patterson AFB, Ohio, United States

Wyle Laboratories, Dayton, Ohio, United States

Opt. Eng. 56(5), 057109 (May 22, 2017). doi:10.1117/1.OE.56.5.057109
History: Received March 8, 2017; Accepted May 1, 2017
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Abstract.  The plasmonic resonance wavelength λres in ZnO doped with 3 wt.% Ga2O3 can be controlled over the range 1 to 4  μm by simple furnace annealing in flowing Ar. For each annealing temperature TA, the reflectance Rm and transmittance Tm are measured over a wavelength range, λ=185 to 3200 nm, (energy range, E=6.7 to 0.387 eV), and the reflectance coefficient R is calculated from Rm and Tm. The value of λres is then determined from a Drude-theory analysis of R versus E that yields fitting parameters nopt (optical carrier concentration), μopt (optical mobility), high-frequency dielectric constant ϵ, and thickness d at each annealing temperature TA. The validity of this process is confirmed by comparison of ϵ with literature values and comparison of nopt and μopt with analogous quantities n and μH measured by the Hall effect.

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© 2017 Society of Photo-Optical Instrumentation Engineers

Citation

David C. Look ; Kevin D. Leedy ; Gordon J. Grzybowski and Bruce B. Claflin
"Near-infrared (1 to 4  μm) control of plasmonic resonance wavelength in Ga-doped ZnO", Opt. Eng. 56(5), 057109 (May 22, 2017). ; http://dx.doi.org/10.1117/1.OE.56.5.057109


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