Paper
11 September 1985 Thin-film Photodetectors For Integrated Optics
M. L. McWright, T. E. Batchman, R. F. Carson
Author Affiliations +
Proceedings Volume 0578, Integrated Optical Circuit Engineering II; (1985) https://doi.org/10.1117/12.950746
Event: 1985 Cambridge Symposium, 1985, Cambridge, United States
Abstract
Metal-silicon-metal cladding layers on dielectric waveguides exhibit coupling and absorption characteristics which make them useful as high-efficiency thin-film photodetectors for integrated optical applications. Periodic coupling between the guided mode of the lossless waveguide and the lossy modes supported by the semiconductor cladding produces an oscillatory behavior as the semiconductor thickness is increased. A high level of energy transfer from the waveguide to the semiconductor can be obtained, thereby maximizing detector absorption.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. L. McWright, T. E. Batchman, and R. F. Carson "Thin-film Photodetectors For Integrated Optics", Proc. SPIE 0578, Integrated Optical Circuit Engineering II, (11 September 1985); https://doi.org/10.1117/12.950746
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Cited by 3 scholarly publications.
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KEYWORDS
Silicon

Waveguides

Photodetectors

Cladding

Absorption

Signal attenuation

Amorphous silicon

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