High Performance GaAlAs LED Structures By Vapour Phase (MOCVD) Epitaxy

R. M. Ash; R. R. Bradley; N. W. Forbes

doi:10.1117/12.963603

6 October 1986 High Performance GaAlAs LED Structures By Vapour Phase (MOCVD) Epitaxy

R. M. Ash, R. R. Bradley, N. W. Forbes

Proceedings Volume 0630, Fibre Optics '86; (1986) https://doi.org/10.1117/12.963603
Event: Sira/Fibre Optics '86, 1986, London, United Kingdom

Abstract

LEDs have been fabricated by two routes using material grown by MOCVD in the GaAs/GaAlAs materials system. High internal quantum efficiencies have been achieved in both a simple junction isolated device and in a high specification proton isolated LED.

Citation Download Citation

R. M. Ash, R. R. Bradley, and N. W. Forbes "High Performance GaAlAs LED Structures By Vapour Phase (MOCVD) Epitaxy", Proc. SPIE 0630, Fibre Optics '86, (6 October 1986); https://doi.org/10.1117/12.963603

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