High Resolution Linewidth Control In Optical Microlithography

Catherine M. Ngo

doi:10.1117/12.963723

20 August 1986 High Resolution Linewidth Control In Optical Microlithography

Catherine M. Ngo

Proceedings Volume 0633, Optical Microlithography V; (1986) https://doi.org/10.1117/12.963723
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

Stringent process and equipment control becomes significant in high resolution submicrometer optical lithography. The system resolution, linewidth control, step coverage, and minimum feature size are not only dependent on the resist process but also dependent on such factors as equipment stability, system calibration, mask design and fabrication, and alignment marks design. When contact mask aligners (contact printers) or projection printers (5x or 10x wafer steppers) are used, attention to equipment control and utilization is essential to achieve submicrometer patterning and allow the process to achieve high yield at these small critical dimensions.

Citation Download Citation

Catherine M. Ngo "High Resolution Linewidth Control In Optical Microlithography", Proc. SPIE 0633, Optical Microlithography V, (20 August 1986); https://doi.org/10.1117/12.963723

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available