Narrow line width semiconductor optical amplifier based random laser

Heba A. Shawki; Hussein E. Kotb; Diaa Khalil

doi:10.1117/12.2251786

22 February 2017 Narrow line width semiconductor optical amplifier based random laser

Heba A. Shawki, Hussein E. Kotb, Diaa Khalil

Proceedings Volume 10083, Fiber Lasers XIV: Technology and Systems; 100832C (2017) https://doi.org/10.1117/12.2251786
Event: SPIE LASE, 2017, San Francisco, California, United States

Abstract

We report a novel narrow line width single longitudinal mode random laser at wavelength of 1550 nm. The laser is based on Rayleigh backscattering in a standard single mode fiber (SMF-28e) as a distributed mirror ^[1,2], and the semiconductor optical amplifier (SOA) as the gain medium. The optical signal to noise ratio was measured to be 34 dB. The line width of the laser was observed to be monotonically increasing with SOA bias current. The minimum line width of the laser was measured to be 6.5 KHz at SOA current of 170 mA. The maximum value of optical power was measured to be 4 mW.

Citation Download Citation

Heba A. Shawki, Hussein E. Kotb, and Diaa Khalil "Narrow line width semiconductor optical amplifier based random laser", Proc. SPIE 10083, Fiber Lasers XIV: Technology and Systems, 100832C (22 February 2017); https://doi.org/10.1117/12.2251786

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