Carrier dynamics studies of III-nitride materials using photo-acoustic and photoluminescence measurements

Atsushi A. Yamaguchi; Takashi Nakano; Shigeta Sakai; Haruki Fukada; Yuya Kanitani; Shigetaka Tomiya

doi:10.1117/12.2252468

16 February 2017 Carrier dynamics studies of III-nitride materials using photo-acoustic and photoluminescence measurements

Atsushi A. Yamaguchi, Takashi Nakano, Shigeta Sakai, Haruki Fukada, Yuya Kanitani, Shigetaka Tomiya

Author Affiliations +

Proceedings Volume 10104, Gallium Nitride Materials and Devices XII; 1010409 (2017) https://doi.org/10.1117/12.2252468
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

Internal quantum efficiency (IQE) of radiative recombination for photo-excited carriers in compound semiconductor materials is usually estimated from temperature dependence of photoluminescence (PL) intensity by assuming that the IQE at cryogenic temperature is unity. III-nitride semiconductors, however, usually have large defect-density, and the assumption is not necessarily valid. In this study, we developed a new method to estimate accurate IQE values by simultaneous PL and photo-acoustic (PA) measurements, and demonstratively evaluated the IQE values for an InGaN quantum-well sample. The results show that the conventional method cannot give accurate IQE values, and that our method is a promising way for accurate estimation of absolute IQE values, which could lead to the accurate estimation of radiative and nonradiative recombination lifetimes in carrier dynamics studies.

Citation Download Citation

Atsushi A. Yamaguchi, Takashi Nakano, Shigeta Sakai, Haruki Fukada, Yuya Kanitani, and Shigetaka Tomiya "Carrier dynamics studies of III-nitride materials using photo-acoustic and photoluminescence measurements", Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 1010409 (16 February 2017); https://doi.org/10.1117/12.2252468

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