Excimer Laser-Assisted Etching Of Solids For Microelectronics

J.-L. Peyre; C. Vannier; D. Riviere; G. Villela

doi:10.1117/12.950117

10 April 1989 Excimer Laser-Assisted Etching Of Solids For Microelectronics

J.-L. Peyre, C. Vannier, D. Riviere, G. Villela

Proceedings Volume 1022, Laser Assisted Processing; (1989) https://doi.org/10.1117/12.950117
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany

Abstract

A variety of gas-solid interactions have been studied using a compact home-made excimer laser. Indium phosphide was irradiated with photons of 193 nm in CF3Br atmosphere at ambient temperature. Surface aspect and etching selectivity with SiO2 seem to be very good. First evaluations of electrical damages on etched surfaces are promising. Silicon etching was investigated in presence of chlorine gas with 308 nm or 248 nm radiations. Influence of material doping on etching conditions was noticed and etch rates depend on gas pressure and gas flow. Other experiments on aluminum films have been performed with the same gas and laser wavelengths.

Citation Download Citation

J.-L. Peyre, C. Vannier, D. Riviere, and G. Villela "Excimer Laser-Assisted Etching Of Solids For Microelectronics", Proc. SPIE 1022, Laser Assisted Processing, (10 April 1989); https://doi.org/10.1117/12.950117

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