An Optoelectronic Technique For S-Parameter Measurements Of GaAs Monolithic Integrated Circuits

P. Polak-Dingels; H.-L. A. Hung; K. J. Webb; T. T. Lee; T. Smith; C. H. Lee

doi:10.1117/12.978335

18 November 1989 An Optoelectronic Technique For S-Parameter Measurements Of GaAs Monolithic Integrated Circuits

P. Polak-Dingels, H.-L. A. Hung, K. J. Webb, T. T. Lee, T. Smith, C. H. Lee

Proceedings Volume 1039, 13th Intl Conf on Infrared and Millimeter Waves; (1989) https://doi.org/10.1117/12.978335
Event: 13th International Conference on Infrared and Millimeter Waves, 1987, Honolulu, HI, United States

Abstract

An optical technique using picosecond pulses has been developed to characterize the magnitude and phase of the frequency response of a gallium arsenide (GaAs) monolithic integrated circuit in the millimeter-wave frequency range. The results of the complex S-parameters of an amplifier obtained using this technique were compared with those obtained using the network analyzer method.

Citation Download Citation

P. Polak-Dingels, H.-L. A. Hung, K. J. Webb, T. T. Lee, T. Smith, and C. H. Lee "An Optoelectronic Technique For S-Parameter Measurements Of GaAs Monolithic Integrated Circuits", Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); https://doi.org/10.1117/12.978335

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