Frequency pressure transducer with a sensitivity of mem capacitor on the basis of transistor structure with negative resistance

Oleksandr V. Osadchuk; Iaroslav O. Osadchuk; Batyrbek Suleimenov; Tomasz Zyska; Abenov Arman; Akmaral Tleshova; Żaklin Grądz

doi:10.1117/12.2280958

7 August 2017 Frequency pressure transducer with a sensitivity of mem capacitor on the basis of transistor structure with negative resistance

Oleksandr V. Osadchuk, Iaroslav O. Osadchuk, Batyrbek Suleimenov, Tomasz Zyska, Abenov Arman, Akmaral Tleshova, Żaklin Grądz

Author Affiliations +

Proceedings Volume 10445, Photonics Applications in Astronomy, Communications, Industry, and High Energy Physics Experiments 2017; 1044559 (2017) https://doi.org/10.1117/12.2280958
Event: Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2017, 2017, Wilga, Poland

Abstract

In the article the pressure transducer with frequency output based on the structure of the bipolar-field transistors with negative resistance and tenso sensitive MEMS capacitor has been considered. A mathematical model of the frequency pressure transducer in dynamic regime has been developed that allowed to determine the voltage or current in the circuit at any given moment in time when acting this pressure. Analytical expressions of the conversion function and sensitivity equation has been received. The sensitivity of the developed device is between 0,95kHz/kPa to 1,65kHz/kPa.

Citation Download Citation

Oleksandr V. Osadchuk, Iaroslav O. Osadchuk, Batyrbek Suleimenov, Tomasz Zyska, Abenov Arman, Akmaral Tleshova, and Żaklin Grądz "Frequency pressure transducer with a sensitivity of mem capacitor on the basis of transistor structure with negative resistance", Proc. SPIE 10445, Photonics Applications in Astronomy, Communications, Industry, and High Energy Physics Experiments 2017, 1044559 (7 August 2017); https://doi.org/10.1117/12.2280958

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