Ge-rich SiGe waveguides for supercontinuum generation in the mid-IR

J. M. Ramírez; S. Serna; V. Vakarin; Q. Liu; J. Frigerio; A. Ballabio; X. Le Roux; L. Vivien; E. Cassan; G. Isella; N. Dubreuil; D. Marris-Morini

doi:10.1117/12.2306873

22 May 2018 Ge-rich SiGe waveguides for supercontinuum generation in the mid-IR

J. M. Ramírez, S. Serna, V. Vakarin, Q. Liu, J. Frigerio, A. Ballabio, X. Le Roux, L. Vivien, E. Cassan, G. Isella, N. Dubreuil, D. Marris-Morini

Author Affiliations +

Proceedings Volume 10686, Silicon Photonics: From Fundamental Research to Manufacturing; 106860P (2018) https://doi.org/10.1117/12.2306873
Event: SPIE Photonics Europe, 2018, Strasbourg, France

Abstract

The third-order nonlinear parameter of Ge-rich SiGe waveguides are experimentally retrieved using a bi-directional top hat D-scan at λ = 1.58 μm. The obtained values are then used to fit the theoretical equation, providing promising values in the mid-IR, where the nonlinear effects are no longer limited by two-photon absorption. New Ge-rich SiGe waveguide designs are provided to exploit the nonlinear properties in the mid-IR, showing a flat anomalous dispersion over one octave spanning from λ = 3 µm to λ = 8 μm and a γ parameter that decreases from γ = 10 W^-1m^-1 .

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J. M. Ramírez, S. Serna, V. Vakarin, Q. Liu, J. Frigerio, A. Ballabio, X. Le Roux, L. Vivien, E. Cassan, G. Isella, N. Dubreuil, and D. Marris-Morini "Ge-rich SiGe waveguides for supercontinuum generation in the mid-IR ", Proc. SPIE 10686, Silicon Photonics: From Fundamental Research to Manufacturing, 106860P (22 May 2018); https://doi.org/10.1117/12.2306873

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